WPT2K37 single, pnp, -60v, -1a, power transistor descriptions low frequency power amplifier complementary pair with wnt2k36. features ? ultra low collector-to-emitter saturation voltage ? high dc current gain >100 ? 1a continue collector current ? small package sot-89-3l. applications ? charging circuit ? power regulator ? linear amplifier ? other power management sot-89-3l pin configuration (top view) WPT2K37 = device code yy = year ww = week marking order information device package shipping WPT2K37-3/tr sot-89-3l 1000/reel&tape 123 4 WPT2K37 yyww 123 4 c ce b 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings a surface mounted on fr-4 board using 1 square inch pad size, 1oz copper b surface mounted on fr-4 board using minimum pad size, 1oz copper c pulse width=300s, duty cycle<2% electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol value unit collector-emitter voltage v ceo -60 v collector-base voltage v cbo -80 v emitter-base voltage v ebo -8 v continues collector current a -2 a continues collector current b i c -1 a pulse collector current c i cm -6 a power dissipation a 1 w power dissipation b p d 0.5 w junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55~150 c parameter symbol test conditions min. typ. max. unit collector-emitter breakdown voltage bv ceo i c =-10ma, i b =0ma -60 v collector-base breakdown voltage bv cbo i c =-100ua, i e =0ma -80 v emitter-base breakdown voltage bv ebo i e =-1ma, i c =0ma -8 v collector cutoff current i cbo v cb =-70v, i e =0ma -3 -100 na emitter cutoff current i ebo v be =-8v,i c =0ma -0.3 -100 na collector-emitter sa turation voltage c v ce(sat) i c =-500ma, i b =-50ma -0.4 v base-emitter forward voltage v be(sat) i c =-500ma, v ce =-2v -1.1 v dc current gain c h fe i c =-500ma , v ce =-2v 60 150 320 dc current gain c h fe i c =-50ma , v ce =-2v 100 170 320 WPT2K37 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) output characteristics dc current gain power derating transfer characteristics c-e saturation voltage vs. collector current 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power or i pp ambient temperature( o c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1e-3 0.01 0.1 1 10 ta=25 o c v ce =-2v i c -collector current (a) v be -base to emitter voltage(v) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 50 100 150 200 250 v ce =-2v ta=25 o c h fe -dc current gain i c -collector current(a) 1e-3 0.01 0.1 1 10 1 10 100 1000 v ce(sat) -collector saturation voltage(mv) i c -collector current(a) 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 i b =0.8ma i b =1.6ma i b =1.2ma i b =0.6ma i b =1.4ma i b =0.4ma i c -collector current(a) v ce -collector to emitter voltage(v) WPT2K37 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions sot-89-3l dimensions in millimeters symbol min. max. a 1.400 1.600 b 0.320 0.520 b1 0.400 0.580 c 0.350 0.440 d 4.400 4.600 d1 1.550 ref. e 2.300 2.600 e1 3.940 4.250 e 1.500 typ. e1 3.000 typ. l 0.900 1.200 WPT2K37 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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